Optical properties of amorphous-like indium zinc oxide and indium gallium zinc oxide thin films
Identifieur interne : 001761 ( Main/Repository ); précédent : 001760; suivant : 001762Optical properties of amorphous-like indium zinc oxide and indium gallium zinc oxide thin films
Auteurs : RBID : Pascal:12-0243471Descripteurs français
- Pascal (Inist)
- Propriété optique, Couche mince, Dépôt laser pulsé, Méthode ablation laser, Simulation numérique, Réflexion RX, Ellipsométrie spectroscopique, Stoechiométrie, Indice réfraction, Transparence, Porteur libre, Spectre visible, Absorption lumière, Semiconducteur amorphe, Oxyde d'indium, Oxyde de zinc, Gallium Indium Zinc Oxyde Mixte, ZnO, In2O3, 7866, 8115F, 0760F.
English descriptors
- KwdEn :
- Amorphous semiconductors, Digital simulation, Free carrier, Gallium Indium Zinc Oxides Mixed, Indium oxide, Laser ablation technique, Light absorption, Optical properties, Pulsed laser deposition, Refractive index, Spectroscopic ellipsometry, Stoichiometry, Thin films, Transparency, Visible spectra, X-ray reflection, Zinc oxide.
Abstract
The paper presents the optical properties of amorphous-like indium zinc oxide and indium gallium zinc oxide thin films with various In/(In+Zn) ratios obtained by Pulsed Laser Deposition. Thickness results obtained from simulations of X-ray Reflectivity and Spectroscopic Ellipsometry data were very similar. The dependence of density on stoichiometry resembles the corresponding dependence of the refractive index in the transparency range. A free carrier absorption was noted in the visible spectral range, leading to a weak absorbing thin transparent conductive oxide. On the other hand, the refractive index is smaller than those of based oxides (ZnO and In2O3), and counterbalance therefore the weak light absorption.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Optical properties of amorphous-like indium zinc oxide and indium gallium zinc oxide thin films</title><author><name sortKey="Galca, A C" uniqKey="Galca A">A. C. Galca</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory of Multifunctional Materials and Structures, National Institute of Materials Physics</s1><s2>077125, Magurele-Bucharest</s2><s3>ROU</s3><sZ>1 aut.</sZ></inist:fA14><country>Roumanie</country><wicri:noRegion>077125, Magurele-Bucharest</wicri:noRegion></affiliation></author><author><name sortKey="Socol, G" uniqKey="Socol G">G. Socol</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laser-Surface-Plasma Interactions Laboratory, Lasers Department, National Institute for Lasers, Plasma and Radiation Physics</s1><s2>077125, Magurele-Bucharest</s2><s3>ROU</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Roumanie</country><wicri:noRegion>077125, Magurele-Bucharest</wicri:noRegion></affiliation></author><author><name sortKey="Craciun, V" uniqKey="Craciun V">V. Craciun</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laser-Surface-Plasma Interactions Laboratory, Lasers Department, National Institute for Lasers, Plasma and Radiation Physics</s1><s2>077125, Magurele-Bucharest</s2><s3>ROU</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Roumanie</country><wicri:noRegion>077125, Magurele-Bucharest</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Materials Science and Engineering, University of Florida, 320 MAE</s1><s2>Gainesville, FL 32611</s2><s3>USA</s3><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Gainesville, FL 32611</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0243471</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0243471 INIST</idno><idno type="RBID">Pascal:12-0243471</idno><idno type="wicri:Area/Main/Corpus">001C61</idno><idno type="wicri:Area/Main/Repository">001761</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous semiconductors</term><term>Digital simulation</term><term>Free carrier</term><term>Gallium Indium Zinc Oxides Mixed</term><term>Indium oxide</term><term>Laser ablation technique</term><term>Light absorption</term><term>Optical properties</term><term>Pulsed laser deposition</term><term>Refractive index</term><term>Spectroscopic ellipsometry</term><term>Stoichiometry</term><term>Thin films</term><term>Transparency</term><term>Visible spectra</term><term>X-ray reflection</term><term>Zinc oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Propriété optique</term><term>Couche mince</term><term>Dépôt laser pulsé</term><term>Méthode ablation laser</term><term>Simulation numérique</term><term>Réflexion RX</term><term>Ellipsométrie spectroscopique</term><term>Stoechiométrie</term><term>Indice réfraction</term><term>Transparence</term><term>Porteur libre</term><term>Spectre visible</term><term>Absorption lumière</term><term>Semiconducteur amorphe</term><term>Oxyde d'indium</term><term>Oxyde de zinc</term><term>Gallium Indium Zinc Oxyde Mixte</term><term>ZnO</term><term>In2O3</term><term>7866</term><term>8115F</term><term>0760F</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The paper presents the optical properties of amorphous-like indium zinc oxide and indium gallium zinc oxide thin films with various In/(In+Zn) ratios obtained by Pulsed Laser Deposition. Thickness results obtained from simulations of X-ray Reflectivity and Spectroscopic Ellipsometry data were very similar. The dependence of density on stoichiometry resembles the corresponding dependence of the refractive index in the transparency range. A free carrier absorption was noted in the visible spectral range, leading to a weak absorbing thin transparent conductive oxide. On the other hand, the refractive index is smaller than those of based oxides (ZnO and In<sub>2</sub>O<sub>3</sub>), and counterbalance therefore the weak light absorption.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>520</s2></fA05><fA06><s2>14</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Optical properties of amorphous-like indium zinc oxide and indium gallium zinc oxide thin films</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the EMRS 2011 Spring Meeting Symposium D: Processing and Characterization of Nanoscale Multi Functional Oxide Films III</s1></fA09><fA11 i1="01" i2="1"><s1>GALCA (A. C.)</s1></fA11><fA11 i1="02" i2="1"><s1>SOCOL (G.)</s1></fA11><fA11 i1="03" i2="1"><s1>CRACIUN (V.)</s1></fA11><fA12 i1="01" i2="1"><s1>CRACIUN (Valentin)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>GUILLOUX-VIRY (Maryline)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>ALEXE (Marin)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>CATALAN BERNABE (Gustau)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>FANCIULLI (Marco)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Laboratory of Multifunctional Materials and Structures, National Institute of Materials Physics</s1><s2>077125, Magurele-Bucharest</s2><s3>ROU</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Laser-Surface-Plasma Interactions Laboratory, Lasers Department, National Institute for Lasers, Plasma and Radiation Physics</s1><s2>077125, Magurele-Bucharest</s2><s3>ROU</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Materials Science and Engineering, University of Florida, 320 MAE</s1><s2>Gainesville, FL 32611</s2><s3>USA</s3><sZ>3 aut.</sZ></fA14><fA15 i1="01"><s1>University of Florida</s1><s3>USA</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>National Institute for Laser, Plasma and Radiation Physics</s1><s2>Bucharest</s2><s3>ROU</s3><sZ>1 aut.</sZ></fA15><fA15 i1="03"><s1>Plasma and Radiation Physics</s1><s2>Bucharest</s2><s3>ROU</s3><sZ>1 aut.</sZ></fA15><fA15 i1="04"><s1>University of Rennes 1</s1><s3>FRA</s3><sZ>2 aut.</sZ></fA15><fA15 i1="05"><s1>Max Planck Institute of Microstructure Physics</s1><s2>Halle</s2><s3>DEU</s3><sZ>3 aut.</sZ></fA15><fA15 i1="06"><s1>Centre dInvestigacions en Nanociencia I Nanotecnologia (CIN2-CSIC)</s1> <s2>Barcelona</s2><s3>ESP</s3><sZ>4 aut.</sZ></fA15><fA15 i1="07"><s1>Università di Milano-Bicocca</s1><s2>Milano</s2><s3>ITA</s3><sZ>5 aut.</sZ></fA15><fA18 i1="01" i2="1"><s1>European Materials Research Society (E-MRS)</s1><s2>Strasbourg</s2><s3>FRA</s3><s9>org-cong.</s9></fA18><fA20><s1>4722-4725</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000506996370480</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>21 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0243471</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The paper presents the optical properties of amorphous-like indium zinc oxide and indium gallium zinc oxide thin films with various In/(In+Zn) ratios obtained by Pulsed Laser Deposition. Thickness results obtained from simulations of X-ray Reflectivity and Spectroscopic Ellipsometry data were very similar. The dependence of density on stoichiometry resembles the corresponding dependence of the refractive index in the transparency range. A free carrier absorption was noted in the visible spectral range, leading to a weak absorbing thin transparent conductive oxide. On the other hand, the refractive index is smaller than those of based oxides (ZnO and In<sub>2</sub>O<sub>3</sub>), and counterbalance therefore the weak light absorption.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H66</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A15F</s0></fC02><fC02 i1="03" i2="3"><s0>001B00G60F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Propriété optique</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Optical properties</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Couche mince</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Thin films</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Dépôt laser pulsé</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Pulsed laser deposition</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Méthode ablation laser</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Laser ablation technique</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Simulation numérique</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Digital simulation</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Réflexion RX</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>X-ray reflection</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Ellipsométrie spectroscopique</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Spectroscopic ellipsometry</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Elipsometría espectroscópica</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Stoechiométrie</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Stoichiometry</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Indice réfraction</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Refractive index</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Transparence</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Transparency</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Porteur libre</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Free carrier</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Portador libre</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Spectre visible</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Visible spectra</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Absorption lumière</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Light absorption</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Semiconducteur amorphe</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Amorphous semiconductors</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Indium oxide</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Indio óxido</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Oxyde de zinc</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Zinc oxide</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Zinc óxido</s0><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Gallium Indium Zinc Oxyde Mixte</s0><s2>NC</s2><s2>NA</s2><s5>17</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Gallium Indium Zinc Oxides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>17</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>17</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>ZnO</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>In2O3</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>7866</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>8115F</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>0760F</s0><s4>INC</s4><s5>73</s5></fC03><fN21><s1>184</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>EMRS 2011 Spring Meeting. Symposium D: Processing and Characterization of Nanoscale Multi Functional Oxide Films III</s1><s3>Nice FRA</s3><s4>2011-05-09</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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